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t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 1 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? commercial and military radar ? communications product features ? frequency range: 6 C 12 ghz ? nf: 2 db ? p1db: 19 dbm ? otoi: 28 dbm ? small signal gain: 22 db ? return loss: >7 db ? bias: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical ? package dimensions: 4 x 4 x 0.85 mm general description triquint s tga2612 - sm is a packaged broadband low noise amplifier fabricated on triquints tqgan25 0.25um gan on sic process. covering 6 C 12 g hz , the tga2612 - sm typically provides >23 dm small signal gain, 19 dbm p1db, and 27 dbm otoi with <2 db of noise figure . in addition to the high electrical performance, this gan amplifier also provides a high level of input power robustness. able to survive up to 2w of input power without performance degradation, triquints tga2612 - sm provides flexibility regarding receive chain protection resulting in lower costs and reduced board space. the tga2612 - sm is available in a surface mount 20 - lead 4x4mm qfn. it is ideally suited for both radar and communications applications. fully matched to 50 ohms with integrated dc blocking caps on both i/o ports, the tga2612 - sm is ideally suited for both military and commercial r adar and communications applications. lead - free and rohs compliant evaluation boards are available upon request. p ad configuration p ad no. symbol 1, 2, 4 - 9, 11, 12, 14, 15, 17 - 20 n/c 3 rf in 10 v g 13 rf out 16 v d functional block diagram ordering information part eccn description tga2612 - sm ear99 6 C 12 ghz gan lna
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 2 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0 v gate voltage range (v g ) - 5 to 0 v drain current (i d ) 300 ma gate current (i g ) - 1 to 7 ma power dissipation , 85 c (p diss ) 6 w input power , cw, 50 , (p in ) 33 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 26 0 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 10 v drain current (i d q ) 1 0 0 m a gate voltage (v g ) - 2. 3 v typical temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed overall operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 10 v, i d q = 10 0 m a, v g = - 2.3 v typical parameter min typical max units operation frequency range 6 12 ghz small signal gain 2 2 db return loss > 7 db noise figure 2 db output power at 1 db gain compression 19 dbm output power at p in = 10 dbm 25 dbm output toi 28 dbm gain temperature coefficient - 0.0 5 db/c noise figure temperature coefficient 0.0 1 db/c
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 3 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) cw t baseplate = 85 c, v d = 10 v, i d q = 100 ma, i d_drive = 1 80 ma, p out = 2 5 dbm, p in = 10dbm , freq = 11ghz , p diss = 1. 6 w 1 7 oc/w channel temperature, t ch (under rf) 11 2 c median lifetime (t m ) 1.8 x 10^11 hrs notes: 1. thermal resistance measured at back of package . median lifetime test conditions: v d = 40 v; failure criteria is 10% reduction in i d_max 15 16 17 18 19 0.5 1.0 1.5 2.0 2.5 3.0 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = 85 0 c, cw 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 5 6 7 8 9 10 11 12 13 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base +85 c +25 c ?40 c cw, p in = 10 dbm
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 4 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : small signal conditions unless otherwise specified: v d = 10 v, i dq = 10 0 ma, v g = - 2.3 v typical 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 6 7 8 9 10 11 12 13 noise figure (db) frequency (ghz) noise figure vs. freq. vs. temperature - 40 c 25 c 85 c 14 17 20 23 26 29 5 6 7 8 9 10 11 12 13 s21 (db) frequency (ghz) gain vs. frequency vs. temperature 85 c 25 c - 40 c 14 17 20 23 26 29 5 6 7 8 9 10 11 12 13 s21 (db) frequency (ghz) gain vs. frequency vs. v d temp = 25 c 20v 18v 16v 14v 12v 10v 8v -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 5 6 7 8 9 10 11 12 13 s11 (db) frequency (ghz) input return loss vs. frequency vs. temp. 85 c 25 c - 40 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 5 6 7 8 9 10 11 12 13 s22 (db) frequency (ghz) output return loss vs. frequency vs. temp. 85 c 25 c - 40 c
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 5 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 10 v, i dq = 125 ma, v g = - 2.3 v typical typical performance : large signal conditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typica l 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 output power (dbm) input power (dbm) output power vs. input power vs. freq. 6 ghz 8 ghz 10 ghz temp = 25 c 12 ghz 15 18 21 24 27 30 5 6 7 8 9 10 11 12 13 p sat (dbm) frequency (ghz) p sat vs. frequency vs. v d 8 v 10 v 12 v p in = 10 dbm, temp = 25 c 15 18 21 24 27 30 5 6 7 8 9 10 11 12 13 p sat (dbm) frequency (ghz) p sat vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 15 17 19 21 23 25 6 7 8 9 10 11 12 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature 85 c 25 c - 40 c 15 17 19 21 23 25 6 7 8 9 10 11 12 p1db (dbm) frequency (ghz) p1db vs. frequency vs. v d 12 v 10 v 8 v temp = 25 c 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 output power (dbm) input power (dbm) output power vs. input power vs. temp. 85 c 25 c - 40 c freq = 10ghz
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 6 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal conditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 gain (db) input power (dbm) gain vs. input power vs. freq. 6 ghz 8 ghz 10 ghz temp = 25 c 12 ghz 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 gain (db) input power (dbm) gain vs. input power vs. temp. - 40 c 25 c 85 c freq = 10 ghz 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 gain (db) input power (dbm) gain vs. input power vs. v d 8 v 10 v 12 v temp = 25 c, 10 ghz 0 5 10 15 20 25 30 5 6 7 8 9 10 11 12 13 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. v d 12 v 10 v 8 v p in = 10 dbm, temp = 25 c 0 5 10 15 20 25 30 5 6 7 8 9 10 11 12 13 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 0 5 10 15 20 25 30 -12 -9 -6 -3 0 3 6 9 12 15 18 power - added efficiency (%) input power (dbm) pae vs. input power vs. freq. 10 ghz 8 ghz 6 ghz temp = 25 c 12 ghz
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 7 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal conditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical 120 140 160 180 200 220 240 260 5 6 7 8 9 10 11 12 13 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d 12 v 10 v 8 v temp = 25 c, p in = 10 dbm 80 100 120 140 160 180 200 220 240 260 280 300 -12 -9 -6 -3 0 3 6 9 12 15 18 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 10 ghz 8 ghz 6 ghz temp = 25 c 12 ghz 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 4 5 6 7 8 9 10 11 12 13 14 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d 12 v 10 v 8 v temp = 25 c, p in = 10 dbm 80 100 120 140 160 180 200 220 240 260 280 300 5 6 7 8 9 10 11 12 13 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 4 5 6 7 8 9 10 11 12 13 14 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. 85 c 25 c - 40 c p in = 10 dbm 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 -12 -9 -6 -3 0 3 6 9 12 15 18 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 10 ghz 8 ghz 6 ghz temp = 25 c 12 ghz
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 8 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity conditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 2 4 6 8 10 12 14 16 18 20 22 im3 (dbc) output power/tone (dbm) im3 vs. output power vs. frequency temp = 25 c, 10 mhz tone spacing 12 ghz 10 ghz 6 ghz 8 ghz 9 ghz -95 -85 -75 -65 -55 -45 -35 -25 2 4 6 8 10 12 14 16 18 20 22 im5 (dbc) output power/tone (dbm) im5 vs. output power vs. frequency temp = 25 c, 10 mhz tone spacing 12 ghz 10 ghz 6 ghz 8 ghz 9 ghz 26 27 28 29 30 31 32 0 2 4 6 8 10 12 14 16 18 20 22 otoi (dbm) output power/tone (dbm) otoi vs. output power vs. frequency temp = 25 c, 10 mhz tone spacing 12 ghz 10 ghz 6 ghz 8 ghz 9 ghz 26 27 28 29 30 31 32 6 7 8 9 10 11 12 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 10 dbm, 10 mhz tone spacing -45 -42 -39 -36 -33 -30 6 7 8 9 10 11 12 im3 (dbc) frequency (ghz) im3 vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 10 dbm, 10 mhz tone spacing -85 -82 -79 -76 -73 -70 -67 -64 -61 -58 -55 6 7 8 9 10 11 12 im5 (dbc) frequency (ghz) im5 vs. frequency vs. temperature pout/tone = 10 dbm, 10 mhz tone spacing 85 c 25 c - 40 c
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 9 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : harmonics conditions unless otherwise specified: v d = 10 v, i dq = 100 ma, v g = - 2.3 v typical -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0 5 10 15 20 2 f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. freq. 6 ghz 9 ghz temp = 25 c 12 ghz -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 0 5 10 15 20 3 f 0 output power (dbc) fundamental output power (dbm) 3 rd harmonic vs. output power vs. freq. 6 ghz 9 ghz temp = 25 c 12 ghz -60 -55 -50 -45 -40 -35 -30 0 5 10 15 20 2 f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. temp. - 40 c 25 c 85 c 9 ghz -75 -70 -65 -60 -55 -50 -45 -40 -35 0 5 10 15 20 3 f 0 output power (dbc) fundamental output power (dbm) 3rd harmonic vs. output power vs. temp. - 40 c 25 c 85 c 9 ghz
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 10 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application information bias - up procedure 1. set i d limit to 300 ma, i g limit to 1ma 2. apply - 5 v to v g for pinch off 3. apply +10 v to v d 4. adjust v g more positive until i dq = 100 ma (v g ~ - 2. 3 v typical) 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5 v. ensure i dq ~ 0 ma 3. set v d to 0 v 4. turn off v d supply 5. turn off v g supply pin description p in n o. symbol description 1, 2, 4 - 9, 11, 12, 14, 15, 17 - 20 n/c recommend grounding on the pcb 3 rf in inpu t; matched to 50 ; dc blocked 10 v g gate voltage; b ias network is required; see recommended application information above. 13 rf out output ; matched to 50 ; dc blocked 1 6 v d drain voltage; b ias network is required; see recommended application information above. 21 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance. v g c2 0.01 uf r3 5 ohm c3 1 uf v d c1 0.01 uf
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 11 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board bill of material reference des. value description manuf. part number c1, c2 0.01 f cap, 0402, 50 v, 10 % , x7r various c3 1 f cap, 1206, 50 v, 10 % , x7r various r1, r2 0 o hms res, 0402, 5% (required for above evb design) various r3 5 ohms res, 0603, 5% various c1 pin1 r3 c2 c3 rf in rf out v d gnd v g gnd r2 r1
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 12 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: mm tolerances: unless specified x.xx = 0.25 x.xxx = 0.127 x.xxxx = 0.0254 angles = 0.5 materials: base: cu alloy all metalized features are nipdau plated part is mold encapsulated marking: 2612: part number yy: part assembly year ww: part assembly week x xxx : lot id
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 13 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended soldering temperature profile
t ga2612 - sm 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 15 - 14 of 14 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability comp atible with the latest version of j - std - 020, lead - free solder, 260c roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, brom ine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level tbd at tbdc convection reflow the part is rated moisture sensitivity level tbd at tbdc per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : ear99 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death.

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